VB30100SG Description
.DataSheet.co.kr New Product V30100SG, VF30100SG, VB30100SG & VI30100SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A TMBS ® TO-220AB ITO-220AB.
VB30100SG Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Low thermal resistance
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
- Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
- ponent in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC