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VB30100SG - High-Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

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VB30100SG High-Voltage Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – VB30100SG

Datasheet Details

Part number	VB30100SG
Manufacturer	Vishay
File Size	226.78 KB
Description	High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB30100SG Datasheet
Additional preview pages of the VB30100SG datasheet.

Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance 2 V30100SG PIN 1 PIN 2 CASE 3 1 VF30100SG PIN 1 PIN 2 2 3 1.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package).
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

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Published: Feb 2, 2012 |