VB30100S-M3 Overview
VB30100S-M3 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K A NC VB30100S NC K A HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 30 A 100 V 250 A 0.69 V 150 °C D2PAK (TO-263AB) Circuit configuration mon cathode.
VB30100S-M3 Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Low thermal resistance
- Meets MSL level 1, per J-STD-020
- Material categorization: for definitions of pliance
VB30100S-M3 Applications
- halogen-free, RoHS-pliant, and mercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whi