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VB30100S-M3 - High-Voltage Trench MOS Barrier Schottky Rectifier

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Datasheet Details

Part number VB30100S-M3
Manufacturer Vishay
File Size 94.09 KB
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VB30100S-M3 Datasheet

Overview

www.vishay.com VB30100S-M3 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K A NC VB30100S NC K A HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max.

Package 30 A 100 V 250 A 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Low thermal resistance.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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