Datasheet4U.com

VB30100S-E3 - High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

📥 Download Datasheet

VB30100S-E3 high voltage trench mos barrier schottky rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	VB30100S-E3
Manufacturer	Vishay
File Size	198.59 KB
Description	High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB30100S-E3 Datasheet

Key Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
.

More Datasheets from Vishay

Part Number	Description
VB30100S-M3	High-Voltage Trench MOS Barrier Schottky Rectifier
VB30100S	High-Voltage Trench MOS Barrier Schottky Rectifier
VB30100SG	High-Voltage Trench MOS Barrier Schottky Rectifier
VB30100C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB30100C-E3	Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB30100CHM3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB30120C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB30120C-E3	Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB30120S	High-Voltage Trench MOS Barrier Schottky Rectifier
VB30120SG	High-Voltage Trench MOS Barrier Schottky Rectifier