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Vishay Intertechnology Electronic Components Datasheet

VB30120C-E3 Datasheet

Dual High Voltage Trench MOS Barrier Schottky Rectifier

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V30120C-E3, VF30120C-E3, VB30120C-E3, VI30120C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V30120C
PIN 1
3
2
1
PIN 2
PIN 3
CASE
D2PAK (TO-263AB)
K
VF30120C
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
2
1
VB30120C
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS
VI30120C
PIN 1
3
2
1
PIN 2
PIN 3
K
click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 15 A
TJ max.
Package
2 x 15 A
120 V
150 A
0.68 V
150 °C
TO-220AB, ITO-220AB,
D2PAK (TO-263AB), TO-262AA
Circuit configuration
Common cathode
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB),
and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage
Max. average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
per diode
EAS
IRRM
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
dV/dt
VAC
TJ, TSTG
V30120C VF30120C VB30120C
120
30
15
150
130
0.5
10 000
1500
-40 to +150
VI30120C
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 18-Jun-2018
1 Document Number: 89041
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VB30120C-E3 Datasheet

Dual High Voltage Trench MOS Barrier Schottky Rectifier

No Preview Available !

V30120C-E3, VF30120C-E3, VB30120C-E3, VI30120C-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage per diode (1)
IR = 1.0 mA
IF = 5 A
IF = 7.5 A
IF = 15 A
IF = 5 A
IF = 7.5 A
IF = 15 A
Reverse current per diode (2)
VR = 90 V
VR = 120 V
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF
IR
120 (min.)
0.56
0.71
0.86
0.50
0.60
0.68
11
8
-
17
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
-
0.97
-
-
0.76
-
-
800
50
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30120C
VF30120C
Typical thermal resistance per diode
RJC
2.2
4.5
VB30120C
2.2
VI30120C
2.2
UNIT
V
V
μA
mA
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V30120C-E3/4W
1.89
ITO-220AB
VF30120C-E3/4W
1.75
TO-263AB
VB30120C-E3/4W
1.38
TO-263AB
VB30120C-E3/8W
1.38
TO-262AA
VI30120C-E3/4W
1.46
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
40
Resistive or Inductive Load
35
30
V(B,I)30120C
25 VF30120C
20
15
10
5
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
18
16 D = 0.5 D = 0.8
D = 0.3
14
D = 0.2
12
10
D = 0.1
8
6
D = 1.0
T
4
2
D = tp/T
tp
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 18-Jun-2018
2 Document Number: 89041
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VB30120C-E3
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Maker Vishay
Total Page 6 Pages
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