VB30120C Description
.DataSheet.co.kr New Product V30120C, VF30120C, VB30120C & VI30120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS ® TO-220AB ITO-220AB.
VB30120C Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
- Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
- ponent in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC