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VB30120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation 2 V30120C PIN 1 PIN 3 PIN 2 CASE 3 1 VF30120C PIN 1 PIN 3 PIN 2 2 3.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package).
  • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

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Datasheet preview – VB30120C

Datasheet Details

Part number VB30120C
Manufacturer Vishay
File Size 226.06 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VB30120C Datasheet
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Full PDF Text Transcription

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www.DataSheet.co.kr New Product V30120C, VF30120C, VB30120C & VI30120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
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