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VB30120SG - High-Voltage Trench MOS Barrier Schottky Rectifier

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Datasheet Details

Part number VB30120SG
Manufacturer Vishay
File Size 212.06 KB
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VB30120SG Datasheet

Overview

www.DataSheet.co.kr New Product V30120SG, VF30120SG, VB30120SG, VI30120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 V30120SG PIN 1 PIN 2 CASE 3 1 VF30120SG PIN 1 PIN 2 2 3 1.
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
  • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPI.

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