Datasheet4U Logo Datasheet4U.com

VB30120S - High-Voltage Trench MOS Barrier Schottky Rectifier

📥 Download Datasheet

Datasheet Details

Part number VB30120S
Manufacturer Vishay
File Size 223.86 KB
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VB30120S Datasheet

Overview

www.DataSheet.co.kr V30120S, VF30120S, VB30120S & VI30120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation 2 V30120S PIN 1 PIN 2 CASE 3 1 VF30120S PIN 1 PIN 2 2 3.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package).
  • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

More Datasheets from Vishay

Part Number Description
VB30120SG High-Voltage Trench MOS Barrier Schottky Rectifier
VB30120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB30120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB30100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB30100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB30100CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB30100S High-Voltage Trench MOS Barrier Schottky Rectifier
VB30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier
VB30100S-M3 High-Voltage Trench MOS Barrier Schottky Rectifier
VB30100SG High-Voltage Trench MOS Barrier Schottky Rectifier