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VB30120C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

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Datasheet Details

Part number VB30120C-E3
Manufacturer Vishay
File Size 201.92 KB
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VB30120C-E3 Datasheet

Overview

V30120C-E3, VF30120C-E3, VB30120C-E3, VI30120C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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