VB30120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	VB30120C
Manufacturer	Vishay
File Size	226.06 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB30120C_Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation 2 V30120C PIN 1 PIN 3 PIN 2 CASE 3 1 VF30120C PIN 1 PIN 3 PIN 2 2 3.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package).
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

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Published: Feb 2, 2012 |