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VB30120S - High-Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation 2 V30120S PIN 1 PIN 2 CASE 3 1 VF30120S PIN 1 PIN 2 2 3.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package).
  • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

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Datasheet Details

Part number VB30120S
Manufacturer Vishay
File Size 223.86 KB
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VB30120S Datasheet

Full PDF Text Transcription (Reference)

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www.DataSheet.co.kr V30120S, VF30120S, VB30120S & VI30120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation 2 V30120S PIN 1 PIN 2 CASE 3 1 VF30120S PIN 1 PIN 2 2 3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
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