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VB30M120CHM3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Download the VB30M120CHM3 datasheet PDF. This datasheet also covers the VB30M120C-E3 variant, as both devices belong to the same dual high voltage trench mos barrier schottky rectifier family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VB30M120C-E3-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VB30M120CHM3
Manufacturer Vishay
File Size 89.00 KB
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VB30M120CHM3 Datasheet

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Other Datasheets by Vishay

Part Number Description
VB30M120C Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB30M120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB30M120C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB30100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB30100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VB30M120C-E3, VB30M120C-M3, VB30M120CHM3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TMBS ® TO-263AB K 2 1 VB30M120C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package 2 x 15 A 120 V 150 A 0.68 V 150 °C TO-263AB Diode variations Common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.