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VB30M120CHM3 Datasheet Dual High Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

Download the VB30M120CHM3 datasheet PDF. This datasheet also includes the VB30M120C-E3 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (VB30M120C-E3-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VB30M120CHM3
Manufacturer Vishay
File Size 89.00 KB
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VB30M120CHM3 Datasheet

Overview

VB30M120C-E3, VB30M120C-M3, VB30M120CHM3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TMBS ® TO-263AB K 2 1 VB30M120C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max.

Package 2 x 15 A 120 V 150 A 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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