VB40M120CHM3 Datasheet Dual High Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

Download the VB40M120CHM3 datasheet PDF. This datasheet also includes the VB40M120C-E3 variant, as both parts are published together in a single manufacturer document.

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VB40M120CHM3 dual high voltage trench mos barrier schottky rectifier by Vishay - Datasheet Preview — Note: The manufacturer provides a single datasheet file (VB40M120C-E3-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	VB40M120CHM3
Manufacturer	Vishay
File Size	Direct Link
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB40M120CHM3 Datasheet

Overview

VB40M120C-E3, VB40M120C-M3, VB40M120CHM3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TMBS ® TO-263AB K 2 1 VB40M120C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max.

Package 2 x 20 A 120 V 250 A 0.

Key Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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