VB40M120C-M3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

This page provides the datasheet information for the VB40M120C-M3, a member of the VB40M120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier family.

Product Overview

Vishay

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Datasheet Details

Part number	VB40M120C-M3
Manufacturer	Vishay
File Size	Direct Link
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB40M120C-M3 Datasheet
Additional preview pages of the VB40M120C-M3 datasheet.

VB40M120C-M3 Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Published: Aug 22, 2017 |