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VB40M120CHM3 Datasheet Dual High Voltage Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: VB40M120C-E3, VB40M120C-M3, VB40M120CHM3 .vishay. Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TMBS ® TO-263AB K 2 1 VB40M120C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 2 x 20 A 120 V 250 A 0.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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VB40M120CHM3 Distributor