VB40M120C
VB40M120C is Dual High-Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
New Product
.vishay.
Vishay General Semiconductor
Ultra Low VF = 0.46 V at IF = 5 A
Features
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS ®
TO-263AB
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
- pliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
1 VB40M120C
PIN 1 PIN 2 K HEATSINK
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
MECHANICAL DATA PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x...
