Datasheet4U Logo Datasheet4U.com

VB40M120C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet Details

Part number VB40M120C-E3
Manufacturer Vishay
File Size Direct Link
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VB40M120C-E3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VB40100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay Siliconix
VB40100G Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay Siliconix
VB408 HIGH VOLTAGE LINEAR REGULATOR POWER I.C. STMicroelectronics
VB408B HIGH VOLTAGE LINEAR REGULATOR POWER I.C. STMicroelectronics
VB408FI HIGH VOLTAGE LINEAR REGULATOR POWER I.C. STMicroelectronics

Other Datasheets by Vishay

Part Number Description
VB40M120C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB40M120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB40M120CHM3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB40100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB40100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VB40M120C-E3, VB40M120C-M3, VB40M120CHM3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TMBS ® TO-263AB K 2 1 VB40M120C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 2 x 20 A 120 V 250 A 0.64 V 150 °C TO-263AB Diode variations Common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.