* TMBS® TO-263AB K
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2
* Compliant to RoHS Directive 2011/65/EU 1 VBT1045BP PIN 1 PIN 2 K HEA
VBT1045BP Datasheet (141.64 KB)
VBT1045BP
141.64 KB
Trench mos barrier schottky rectifier.
VBT1045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.41 .
📁 Related Datasheet
VBT1045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT1045C-E3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT1045CBP Trench MOS Barrier Schottky Rectifier Rectifier (Vishay)
VBT1045CBP-M3 Trench MOS Barrier Schottky Rectifier (Vishay)
VBT10200C Trench MOS Barrier Schottky Rectifier (Vishay)
VBT10200C-E3 Trench MOS Barrier Schottky Rectifier (Vishay)
VBT10202C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT1060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT1060C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT1080C-M3 Dual Trench MOS Barrier Schottky Rectifier (Vishay)
