* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* TJ 200 °C max. in solar bypass mode application
* Material categorization: For def
VBT1045CBP-M3 Datasheet (86.58 KB)
VBT1045CBP-M3
86.58 KB
Trench mos barrier schottky rectifier.
www.vishay.com VBT1045CBP-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.
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