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Vishay Intertechnology Electronic Components Datasheet

VBT1045CBP-M3 Datasheet

Trench MOS Barrier Schottky Rectifier

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VBT1045CBP-M3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.34 V at IF = 2.5 A
TMBS ®
TO-263AB
K
2
1
VBT1045CBP
PIN 1
K
PIN 2
HEATSINK
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
• TJ 200 °C max. in solar bypass mode application
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS
Package
TO-263AB
IF(AV)
VRRM
IFSM
2 x 5.0 A
45 V
100 A
VF at IF = 5.0 A
0.41 V
TOP max. (AC mode)
TJ max. (DC forward current)
Diode variation
150 °C
200 °C
Common cathode
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV) (1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Operating junction and storage temperature range (AC mode)
Junction temperature in DC forward current
without reverse bias, t 1 h
TOP, TSTG
TJ (2)
Notes
(1) With heatsink
(2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
VBT1045CBP
45
10
5
100
- 40 to + 150
200
UNIT
V
A
A
°C
°C
Revision: 30-Apr-13
1 Document Number: 87960
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VBT1045CBP-M3 Datasheet

Trench MOS Barrier Schottky Rectifier

No Preview Available !

www.vishay.com
VBT1045CBP-M3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage per diode
IF = 2.5 A
IF = 5.0 A
IF = 2.5 A
IF = 5.0 A
Reverse current per diode
VR = 45 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.44
0.49
0.34
0.41
-
5
MAX.
-
0.58
-
0.50
500
15
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
RJC
VBT1045CBP
3.5
2.5
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-263AB
VBT1045CBP-M3/4W
1.38
TO-263AB
VBT1045CBP-M3/8W
1.38
PACKAGE CODE
4W
8W
BASE QUANTITY
50/tube
800/reel
DELIVERY MODE
Tube
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
10
8
6
4
2 DC Forward Current at
Thermal Equilibrium
0
100 120 140 160 180 200
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
4.0
D = 0.5 D = 0.8
3.5
D = 0.3
3.0
2.5 D = 0.2
2.0
D = 0.1
1.5
1.0
D = 1.0
T
0.5
D = tp/T tp
0
0123456
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 30-Apr-13
2 Document Number: 87960
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VBT1045CBP-M3
Description Trench MOS Barrier Schottky Rectifier
Maker Vishay
Total Page 4 Pages
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