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VBT1045CBP-M3 Datasheet Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

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Datasheet Details

Part number VBT1045CBP-M3
Manufacturer Vishay
File Size 86.58 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VBT1045CBP-M3 Datasheet

Overview

www.vishay.com VBT1045CBP-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • TJ 200 °C max. in solar bypass mode.

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