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VBT1545CBP Key Features

  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Meets MSL level 1, per LF maximum peak of 245 °C
  • TJ 200 °C max. in solar bypass mode application
  • Material categorization: For definitions of pliance please see .vishay./doc?99912

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VBT1545CBP Description

Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.41 V at IF = 5 A TMBS ® TO-263AB.

VBT1545CBP Applications

  • RoHS pliant, mercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As