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VBT3045BP-M3 Key Features

  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Meets MSL level 1, per J-STD-020, LF maximum
  • TJ 200 °C max. in solar bypass application
  • Material categorization: For definitions of pliance

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VBT3045BP-M3 Description

VBT3045BP-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5 A TMBS® TO-263AB K PIN 1 PIN 2 2 1 K HEATSINK.