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VBT3080S - Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 1 VT3080S PIN 1 PIN 2 CASE 3 1 VFT3080S PIN 1 PIN 2 2 3.
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
  • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in PIN 3.

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Datasheet Details

Part number VBT3080S
Manufacturer Vishay
File Size 205.62 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VBT3080S Datasheet

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Full PDF Text Transcription

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New Product VT3080S, VFT3080S, VBT3080S, VIT3080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
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