* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for
VBT760-E3 Datasheet (128.44 KB)
VBT760-E3
128.44 KB
Trench mos barrier schottky rectifier.
VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V a.
📁 Related Datasheet
VBT10200C Trench MOS Barrier Schottky Rectifier (Vishay)
VBT10200C-E3 Trench MOS Barrier Schottky Rectifier (Vishay)
VBT10202C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT1045BP Trench MOS Barrier Schottky Rectifier (Vishay)
VBT1045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT1045C-E3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT1045CBP Trench MOS Barrier Schottky Rectifier Rectifier (Vishay)
VBT1045CBP-M3 Trench MOS Barrier Schottky Rectifier (Vishay)
VBT1060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT1060C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
