VFT10200C-E3 Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum
- Material categorization: For definitions of pliance
- Part: VFT10200C-E3
- Manufacturer: Vishay (official site)
- Size: 154.89 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| VFT10200C | Trench MOS Barrier Schottky Rectifier |
| VFT1045BP | Trench MOS Barrier Schottky Rectifier |
| VFT1045CBP | Trench MOS Barrier Schottky Rectifier |
| VFT1060C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| VFT1060C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
VFT10200C-E3 Description
VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3 .vishay.