VI30100C Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Low thermal resistance
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- Material categorization: for definitions of pliance
- Part: VI30100C
- Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier
- Manufacturer: Vishay
- Size: 133.72 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| VI30100C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| VI30100S | High-Voltage Trench MOS Barrier Schottky Rectifier |
| VI30100S-E3 | High Voltage Trench MOS Barrier Schottky Rectifier |
| VI30100SG | High-Voltage Trench MOS Barrier Schottky Rectifier |
| VI30120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |