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VI30M120C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Vishay

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VI30M120C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – VI30M120C-M3

Datasheet Details

Part number	VI30M120C-M3
Manufacturer	Vishay
File Size	146.49 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VI30M120C-M3 Datasheet
Additional preview pages of the VI30M120C-M3 datasheet.

Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
AEC-Q101 qualified.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Published: Aug 22, 2017 |