VI30M120CHM3 Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- AEC-Q101 qualified
- Material categorization: For definitions of pliance
- Part: VI30M120CHM3
- Manufacturer: Vishay (official site)
- Size: 146.49 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| VI30M120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| VI30M120C-M3 | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| VI30100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| VI30100C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| VI30100S | High-Voltage Trench MOS Barrier Schottky Rectifier |
VI30M120CHM3 Description
.vishay. V30M120CxM3, VI30M120CxM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V30M120C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI30M120C 3 2 1 PIN 1 PIN 2 PIN.