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VS-GB150YG120NT - IGBT ECONO3 Module

Key Features

  • Gen 5 non punch through (NPT) technology.
  • 10 μs short circuit capability.
  • Square RBSOA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VS-GB150YG120NT Vishay Semiconductors IGBT ECONO3 Module, 150 A ECONO 3 4 pack PRIMARY CHARACTERISTICS VCES IC(DC) at TC = 57 °C VCE(on) typ. at 150 A Package 1200 V 150 A 3.45 V ECONO 3 Circuit configuration 4 pack with thermistor FEATURES • Gen 5 non punch through (NPT) technology • 10 μs short circuit capability • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive temperature coefficient • Copper baseplate • Operating frequencies 8 kHz to 60 kHz • Low stray inductance design • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.