VS-GB90DA120U Description
.vishay. VS-GB90DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A SOT-227 PRIMARY CHARACTERISTICS VCES IC DC VCE(on) typical at 75 A, 25 °C Speed 1200 V 90 A at 90 °C 3.3 V 8 kHz to 30 kHz Package SOT-227 Circuit.
VS-GB90DA120U Key Features
- NPT Gen 5 IGBT technology
- Square RBSOA
- HEXFRED® low Qrr, low switching energy
- Positive VCE(on) temperature coefficient
- Fully isolated package
- Very low internal inductance ( 5 nH typical)
- Industry standard outline
- UL approved file E78996
- Material categorization: for definitions of pliance
- Designed for increased operating efficiency in power