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VS-GB90SA120U Datasheet IGBT

Manufacturer: Vishay

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Overview

www.vishay.com VS-GB90SA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A SOT-227 PRIMARY CHARACTERISTICS VCES VCE(on) typical at 75 A, 25 °C IC DC Speed 1200 V 3.

Key Features

  • NPT Gen 5 IGBT technology.
  • Square RBSOA.
  • Positive VCE(on) temperature coefficient.
  • Fully isolated package.
  • Speed 8 kHz to 60 kHz.
  • Very low internal inductance ( 5 nH typical).
  • Industry standard outline.
  • UL approved file E78996.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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