* Trench IGBT technology with positive temperature coefficient
* Square RBSOA
* 3 μs short circuit capability
* FRED Pt® antiparallel diodes with ultrasoft reverse recovery
* TJ maximum = 175 °C
* Fully isolated package
* Very low internal indu
VS-GT140DA60U Datasheet (186.01 KB)
VS-GT140DA60U
186.01 KB
Igbt.
www.vishay.com VS-GT140DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 140 A SOT-227 PRIMARY CHARACTERISTICS VCES IC.
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