VS-GT140DA60U Description
.vishay. VS-GT140DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 140 A SOT-227 PRIMARY CHARACTERISTICS VCES IC DC VCE(on) typical at 100 A, 25 °C IF DC Speed 600 V 140 A at 90 °C 1.72 V 71 A at 90 °C 8 kHz to 30 kHz Package.
VS-GT140DA60U Key Features
- Trench IGBT technology with positive
- Square RBSOA
- 3 μs short circuit capability
- FRED Pt® antiparallel diodes with ultrasoft reverse
- TJ maximum = 175 °C
- Fully isolated package
- Very low internal inductance ( 5 nH typical)
- Industry standard outline
- UL approved file E78996
- Material categorization: for definitions of pliance