VS-GT175DA120U Description
.vishay. VS-GT175DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 175 A SOT-227 PRODUCT SUMMARY VCES IC(DC) VCE(on) typical at 100 A, 25 °C IF(DC) Speed 1200 V 175 A at 90 °C (1) 1.73 V 32 A at 90 °C 8 kHz to 30 kHz Package.
VS-GT175DA120U Key Features
- Trench IGBT technology with positive
- Square RBSOA
- 10 μs short circuit capability
- HEXFRED® antiparallel diodes with ultrasoft reverse
- TJ maximum = 150 °C
- Fully isolated package
- Very low internal inductance ( 5 nH typical)
- Industry standard outline
- UL approved file E78996
- Material categorization: for definitions of pliance