* Trench IGBT technology with positive temperature coefficient
* Square RBSOA
* 10 μs short circuit capability
* HEXFRED® antiparallel diodes with ultrasoft reverse recovery
* TJ maximum = 150 °C
* Fully isolated package
* Very low internal ind
VS-GT175DA120U Datasheet (292.93 KB)
VS-GT175DA120U
292.93 KB
Igbt.
www.vishay.com VS-GT175DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 175 A SOT-227 PRODUCT SUMMARY VCES IC(DC) VC.
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