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VS-GT200TP065N - Half Bridge - Trench IGBT

Key Features

  • Trench IGBT.
  • Very low VCE(on).
  • 5 μs short circuit capability.
  • Positive VCE(on) temperature coefficient.
  • FRED Pt® anti-parallel diode low Qrr and low switching energy.
  • Industry and standard package.
  • TJ = 175 °C.
  • UL pending.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VS-GT200TP065N Vishay Semiconductors INT-A-PAK, Half Bridge - Trench IGBT, 200 A INT-A-PAK PRIMARY CHARACTERISTICS VCES IC (DC) at TC = 80 °C VCE(on) (typical) at IC = 200 A, TJ = 25 °C Speed 650 V 166 A 1.9 V 8 kHz to 30 kHz Package INT-A-PAK Circuit configuration Half bridge FEATURES • Trench IGBT • Very low VCE(on) • 5 μs short circuit capability • Positive VCE(on) temperature coefficient • FRED Pt® anti-parallel diode low Qrr and low switching energy • Industry and standard package • TJ = 175 °C • UL pending • Material categorization: for definitions of compliance please see www.vishay.