VS-GT200TP065N Description
.vishay. VS-GT200TP065N Vishay Semiconductors INT-A-PAK, Half Bridge - Trench IGBT, 200 A INT-A-PAK PRIMARY CHARACTERISTICS VCES IC (DC) at TC = 80 °C VCE(on) (typical) at IC = 200 A, TJ = 25 °C Speed 650 V 166 A 1.9 V 8 kHz to 30 kHz Package INT-A-PAK.
VS-GT200TP065N Key Features
- Trench IGBT
- Very low VCE(on)
- 5 μs short circuit capability
- Positive VCE(on) temperature coefficient
- FRED Pt® anti-parallel diode low Qrr and low switching
- Industry and standard package
- TJ = 175 °C
- UL pending
- Material categorization: for definitions of pliance
- Benchmark efficiency for UPS and welding application