* Trench IGBT
* Very low VCE(on)
* 5 μs short circuit capability
* Positive VCE(on) temperature coefficient
* FRED Pt® anti-parallel diode low Qrr and low switching energy
* Industry and standard package
* TJ = 175 °C
* UL pending
VS-GT200TP065N Datasheet (143.09 KB)
VS-GT200TP065N
143.09 KB
Half bridge - trench igbt.
www.vishay.com VS-GT200TP065N Vishay Semiconductors INT-A-PAK, Half Bridge - Trench IGBT, 200 A INT-A-PAK PRIMARY CHARACTERISTICS VCES IC (DC) at.
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