VS-GT80DA120U - IGBT

Features

Trench IGBT technology.
Positive VCE(on) temperature coefficient.
Square RBSOA.
10 μs short circuit capability.

Vishay

Datasheet Details

Part number	VS-GT80DA120U
Manufacturer	Vishay
File Size	182.11 KB
Description	IGBT
Datasheet	VS-GT80DA120U Datasheet
Additional preview pages of the VS-GT80DA120U datasheet.

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Full PDF Text Transcription

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www.vishay.com VS-GT80DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 80 A SOT-227 PRIMARY CHARACTERISTICS VCES 1200 V IC DC VCE(on) typical at 80 A, 25 °C 80 A at 104 °C 2.0 V Speed 8 kHz to 30 kHz Package SOT-227 Circuit configuration Single switch with AP diode FEATURES • Trench IGBT technology • Positive VCE(on) temperature coefficient • Square RBSOA • 10 μs short circuit capability • HEXFRED® low Qrr, low switching energy • TJ maximum = 150 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.

Published: May 5, 2020 |