* Trench IGBT technology
* Positive VCE(on) temperature coefficient
* Square RBSOA
* 10 μs short circuit capability
* HEXFRED® low Qrr, low switching energy
* TJ maximum = 150 °C
* Fully isolated package
* Very low internal inductance (
VS-GT80DA120U Datasheet (182.11 KB)
VS-GT80DA120U
182.11 KB
Igbt.
www.vishay.com VS-GT80DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 80 A SOT-227 PRIMARY CHARACTERISTICS VCES 12.
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