VS-GT80DA120U Datasheet | Vishay

FEATURES - Trench IGBT technology - Positive VCE(on) temperature coefficient - Square RBSOA - 10 μs short circuit capability - HEXFRED® low Qrr, low switching energy - TJ maximum = 150 °C - Fully isolated package - Very low internal inductance ( 5 n H typical) - Industry standard outline - UL approved file E78996 - Material categorization: for definitions of pliance please see .vishay./doc?99912 BENEFITS - Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating - Easy to assemble and parallel - Direct mounting to heatsink - Plug-in patible with other SOT-227 packages - Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current Pulsed collector current Clamped inductive load current ICM ILM Diode continuous forward current Single pulse forward current Gate to emitter voltage IFSM VGE Power dissipation, IGBT Power dissipation, diode Isolation voltage PD VISOL TEST CONDITIONS TC = 25 °C TC = 90 °C TC = 25 °C TC = 90 °C 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C TC = 25 °C TC = 90 °C TC = 25 °C TC = 90 °C Any terminal to case, t = 1 min MAX. 1200...