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VS-GT80DA120U
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Trench IGBT), 80 A
SOT-227
PRIMARY CHARACTERISTICS
VCES
1200 V
IC DC VCE(on) typical at 80 A, 25 °C
80 A at 104 °C 2.0 V
Speed
8 kHz to 30 kHz
Package
SOT-227
Circuit configuration
Single switch with AP diode
FEATURES • Trench IGBT technology • Positive VCE(on) temperature coefficient • Square RBSOA • 10 μs short circuit capability • HEXFRED® low Qrr, low switching energy • TJ maximum = 150 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance
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VS-GT80DA120U Datasheet
