Datasheet4U Logo Datasheet4U.com

VS-GT80DA60U - IGBT

Features

  • High speed trench gate field-stop IGBT positive temperature coefficient.
  • TJ maximum = 175 °C.
  • FRED Pt® anti-parallel diodes with ultrasoft reverse recovery.
  • Fully isolated package.
  • Very low internal inductance ( 5 nH typical).
  • Industry standard outline.
  • UL approved file E78996.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

📁 Similar Datasheet

Other Datasheets by Vishay

Full PDF Text Transcription

Click to expand full text
www.vishay.com VS-GT80DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 600 V, 80 A SOT-227 PRIMARY CHARACTERISTICS VCES IC DC VCE(on) typical at 80 A, 25 °C IF (DC) Speed 600 V 80 A at TC = 97 °C 1.83 V 56 A at TC = 100 °C 8 kHz to 30 kHz Package SOT-227 Circuit configuration Single switch with AP diode FEATURES • High speed trench gate field-stop IGBT positive temperature coefficient • TJ maximum = 175 °C • FRED Pt® anti-parallel diodes with ultrasoft reverse recovery • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.
Published: |