VS-GT80DA60U Description
.vishay. VS-GT80DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 600 V, 80 A SOT-227 PRIMARY CHARACTERISTICS VCES IC DC VCE(on) typical at 80 A, 25 °C IF (DC) Speed 600 V 80 A at TC = 97 °C 1.83 V 56 A at TC = 100 °C 8 kHz to 30.
VS-GT80DA60U Key Features
- High speed trench gate field-stop IGBT positive
- TJ maximum = 175 °C
- FRED Pt® anti-parallel diodes with ultrasoft
- Fully isolated package
- Very low internal inductance ( 5 nH typical)
- Industry standard outline
- UL approved file E78996
- Material categorization: for definitions of pliance
- Designed for increased operating efficiency in power
- Easy to assemble and safe paralleling