VS-GT80DA120U Description
.vishay. VS-GT80DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 80 A SOT-227 PRIMARY CHARACTERISTICS VCES 1200 V IC DC VCE(on) typical at 80 A, 25 °C 80 A at 104 °C 2.0 V Speed 8 kHz to 30 kHz Package SOT-227 Circuit.
VS-GT80DA120U Key Features
- Trench IGBT technology
- Positive VCE(on) temperature coefficient
- Square RBSOA
- 10 μs short circuit capability
- HEXFRED® low Qrr, low switching energy
- TJ maximum = 150 °C
- Fully isolated package
- Very low internal inductance ( 5 nH typical)
- Industry standard outline
- UL approved file E78996