VS-GT80DA120U
VS-GT80DA120U is IGBT manufactured by Vishay.
.vishay.
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Trench IGBT), 80 A
SOT-227
PRIMARY CHARACTERISTICS
VCES
1200 V
IC DC VCE(on) typical at 80 A, 25 °C
80 A at 104 °C 2.0 V
Speed
8 kHz to 30 kHz
Package
SOT-227
Circuit configuration
Single switch with AP diode
Features
- Trench IGBT technology
- Positive VCE(on) temperature coefficient
- Square RBSOA
- 10 μs short circuit capability
- HEXFRED® low Qrr, low switching energy
- TJ maximum = 150 °C
- Fully isolated package
- Very low internal inductance ( 5 nH typical)
- Industry standard outline
- UL approved file E78996
- Material categorization: for definitions of pliance please see...