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VS-GT80DA120U Datasheet IGBT

Manufacturer: Vishay

Overview

www.vishay.com VS-GT80DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 80 A SOT-227 PRIMARY CHARACTERISTICS VCES 1200 V IC DC VCE(on) typical at 80 A, 25 °C 80 A at 104 °C 2.

Key Features

  • Trench IGBT technology.
  • Positive VCE(on) temperature coefficient.
  • Square RBSOA.
  • 10 μs short circuit capability.