* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* Ultra Low RDS(on) N- and P-Channel for High Efficiency
* Optimized for High-Side/Low-Side
* Minimized Conduction Losses
* Compliant to RoHS Directive 2002/95/EC APPLICATI
SI3590DV Datasheet (229.14 KB)
SI3590DV
Vishay ↗ Siliconix
229.14 KB
N- and p-channel 30-v (d-s) mosfet.
Si3590DV Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 30 0.077 at VGS = 4.5 V 0.120 at VGS .
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