Si3911DV
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "8 V
VDS = –16 V, VGS = 0 V
VDS = –16 V, VGS = 0 V, TJ = 85_C
VDS = –5 V, VGS = –4.5 V
VGS = –4.5 V, ID = –2.2 A
VGS = –2.5 V, ID = –1.8 A
VGS = –1.8 V, ID = –1.0 A
VDS = –5 V, ID = –2.2 A
IS = –1.05 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = –10 V, VGS = –4.5 V, ID = –2.2 A
VDD = –4 V, RL = 8 W
ID ^ –1 A, VGEN = –4.5 V, RG = 6 W
IF = –1.05 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
–0.45
–5
0.115
0.163
0.240
5
–0.8
"100
–1
–10
0.145
0.200
0.300
–1.1
V
nA
mA
A
W
S
V
5 7.5
1 nC
0.9
12 20
29 50
24 45 ns
30 50
20 40
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
8
VGS = 4.5 thru 2.5 V
6
4 2V
2
1.5 V
0
0
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2
1234
VDS – Drain-to-Source Voltage (V)
5
Transfer Characteristics
10
TC = –55_C
8
25_C
6
125_C
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS – Gate-to-Source Voltage (V)
Document Number: 71380
S-20275—Rev. B, 18-Mar-02
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