ID (A) 7.5 6.5 6.0 D TrenchFETr Power MOSFET D ESD Protected: 4000 V D Common Drain APPLICATIONS D 1-2 Cell Battery Protection Circuitry D D TSSOP-8 D S1 S1 G1 1 2 3.

D 1-2 Cell Battery Protection Circuitry D D TSSOP-8 D S1 S1 G1 1 2 3 4 Top View S1 N-Channel *Typical value by design.

SI6801DQ

SI6802DQ

SI6820DQ

SI6821DQ

SI6862DQ

SI6866BDQ

SI6866DQ

SI6875DQ

Si6040

SI60DC100

Si6404DQ

Si6413DQ

SI6421DQ

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