* ID (A) 7.5 6.5 6.0 D TrenchFETr Power MOSFET D ESD Protected: 4000 V D Common Drain APPLICATIONS D 1-2 Cell Battery Protection Circuitry D D TSSOP-8 D S1 S1 G1 1 2 3 4 Top View S1 N-Channel
* Typical value by design N-Channel S2 D 8 D 7 S2 6 S2 5 G2
* 1.5 kW G1 G2
* 1.5 kW Si6880EDQ
SI6880EDQ Datasheet (44.32 KB)
SI6880EDQ
Vishay ↗ Siliconix
44.32 KB
N-channel mosfet.
Si6880EDQ New Product Vishay Siliconix N-Channel 1.8-V (G-S) Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.018 @ VGS = 4.5 V .
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