* 560 V VGS = 10 V 48 12 15 Single D
* Low Figure-of-Merit Ron x Qg 0.555
* 100 % Avalanche Tested
* Gate Charge Improved
* Trr/Qrr Improved
* Compliant to RoHS Directive 2002/95/EC G D S GD S D2PAK (TO-263) G S G D S N-Channel MOSFET ORDERING INFORMA
SIHB12N50C Datasheet (215.10 KB)
SIHB12N50C
Vishay ↗ Siliconix
215.10 KB
Power mosfet.
www.DataSheet.co.kr SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Q.
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