Datasheet Summary
.vishay.
Vishay Siliconix
D Series Power MOSFET
DPAK (TO-252) D
N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
VGS = 10 V
Single
Features
- Optimal design
- Low area specific on-resistance
- Low input capacitance (Ciss)
- Reduced capacitive switching losses
- High body diode ruggedness
- Avalanche energy rated (UIS)
Available
- Optimal efficiency and operation
- Low cost
- Simple gate drive circuitry
- Low figure-of-merit (FOM): Ron x Qg
- Fast switching
- Material categorization: for definitions of pliance please see .vishay./doc?99912
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