SiHD3N50D - D Series Power MOSFET

Vishay

Key Features

Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS) Available.
Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low figure-of-merit (FOM): Ron x Qg - Fast switching.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

SiHD3N50D d series power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SiHD3N50D
Manufacturer	Vishay
File Size	211.32 KB
Description	D Series Power MOSFET
Datasheet	SiHD3N50D Datasheet

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Full PDF Text Transcription (Reference)

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www.vishay.com SiHD3N50D Vishay Siliconix D Series Power MOSFET DPAK (TO-252) D S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 3.2 12 2 3 Single FEATURES • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS) Available • Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low figure-of-merit (FOM): Ron x Qg - Fast switching • Material categorization: for definitions of compliance please see www.vishay.