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SiHD3N50D Datasheet D Series Power MOSFET

Manufacturer: Vishay

Overview: www.vishay.com SiHD3N50D Vishay Siliconix D Series Power MOSFET DPAK (TO-252) D S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 3.

Key Features

  • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS) Available.
  • Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low figure-of-merit (FOM): Ron x Qg - Fast switching.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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