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SIHB12N50C - Power MOSFET

Download the SIHB12N50C datasheet PDF. This datasheet also covers the SIHF12N50C variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 560 V VGS = 10 V 48 12 15 Single D.
  • Low Figure-of-Merit Ron x Qg 0.555.
  • 100 % Avalanche Tested.
  • Gate Charge Improved.
  • Trr/Qrr Improved.
  • Compliant to RoHS Directive 2002/95/EC G D S GD S D2PAK (TO-263) G S G D S N-Channel MOSFET.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SIHF12N50C_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet.co.kr SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration TO-220AB TO-220 FULLPAK FEATURES 560 V VGS = 10 V 48 12 15 Single D • Low Figure-of-Merit Ron x Qg 0.