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Vishay Intertechnology Electronic Components Datasheet

SiHD3N50D Datasheet

D Series Power MOSFET

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www.vishay.com
SiHD3N50D
Vishay Siliconix
D Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. () at 25 °C
Qg (max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
550
VGS = 10 V
20
3
5
Single
3.2
DPAK
(TO-252)
D
GS
D
G
S
N-Channel MOSFET
FEATURES
• Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg
- Fast Switching
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Consumer Electronics
- Displays (LCD or Plasma TV)
• Server and Telecom Power Supplies
- SMPS
• Industrial
- Welding
- Induction Heating
- Motor Drives
• Battery Chargers
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
www.DataSheet.co.kr
DPAK (TO-252)
SiHD3N50D-E3
SiHD3N50D-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt (d)
TJ = 125 °C
EAS
PD
TJ, Tstg
dV/dt
Soldering Recommendations (Peak Temperature)c
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 2.8 A.
c. 1.6 mm from case.
d. ISD ID, starting TJ = 25 °C.
LIMIT
500
± 30
30
3.0
1.9
5.5
0.56
9
104
- 55 to + 150
24
0.22
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S12-0689-Rev. A, 02-Apr-12
1
Document Number: 91495
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SiHD3N50D Datasheet

D Series Power MOSFET

No Preview Available !

www.vishay.com
SiHD3N50D
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
RthJA
RthJC
TYP.
-
-
MAX.
62
1.8
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductancea
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 250 μA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.5 A
VDS = 8 V, ID = 1.5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Relatedb
Effective Output Capacitance, Time
Relatedc
Ciss
Coss
Crss
Co(er)
Co(tr)
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
VDS = 0 V to 400 V, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 10 Vwww.DataSheet.co.kr
ID = 1.5 A, VDS = 400 V
VDD = 400 V, ID = 1.5 A
Rg = 9.1 , VGS = 10 V
f = 1 MHz, open drain
MIN. TYP.
500 -
- 0.56
3-
--
--
--
- 2.6
-1
- 175
- 21
-5
- 21
- 26
-6
-2
-3
- 12
-9
- 11
- 13
- 3.3
Continuous Source-Drain Diode Current IS MOSFET symbol
showing the
Pulsed Diode Forward Current
integral reverse
ISM P - N junction diode
D
G
S
--
--
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
VSD
trr
Qrr
IRRM
TJ = 25 °C, IS = 1.5 A, VGS = 0 V
TJ = 25 °C, IF = IS = 1.5 A,
dI/dt = 100 A/μs, VR = 20 V
--
- 293
- 0.74
-5
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
c. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
MAX. UNIT
-
-
5
± 100
1
10
3.2
-
V
V/°C
V
nA
μA
S
-
-
-
pF
-
-
12
- nC
-
24
18
ns
22
26
-
3
A
12
1.2 V
- ns
- μC
-A
S12-0689-Rev. A, 02-Apr-12
2
Document Number: 91495
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SiHD3N50D
Description D Series Power MOSFET
Maker Vishay Siliconix
Total Page 9 Pages
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