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Vishay Intertechnology Electronic Components Datasheet

SiHFBC30L Datasheet

Power MOSFET

No Preview Available !

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
www.DataSheet4UC.coonmfiguration
600
VGS = 10 V
31
4.6
17
Single
2.2
D
I2PAK (TO-262) D2PAK (TO-263)
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Surface Mount (IRFBC30S, SiHFBC30S)
• Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)
• Available in Tape and Reel (IRFBC30S,
SiHFBC30S)
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capable of
the accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application. The
through-hole version (IRFBC30L, SiHFBC30L) is a available
for low-profile applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free
IRFBC30SPbF
SiHFBC30S-E3
SnPb
IRFBC30S
SiHFBC30S
Note
a. See device orientation.
D2PAK (TO-263)
IRFBC30STRLPbFa
SiHFBC30STL-E3a
-
-
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currente
Pulsed Drain Currenta, e
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Avalanche Currenta
Repetiitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
VGS at 10 V
TC = 25 °C
TC = 100 °C
TA = 25 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 41 mH, RG = 25 Ω, IAS = 3.6 A (see fig. 12).
c. ISD 3.6 A, dI/dt 60 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRFBC30/SiHFBC30 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
I2PAK (TO-262)
IRFBC30LPbF
SiHFBC30L-E3
IRFBC30L
SiHFBC30L
LIMIT
600
± 20
3.6
2.3
14
0.59
290
3.6
7.4
3.1
74
3.0
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Document Number: 91111
S-Pending-Rev. A, 10-Jun-08
WORK-IN-PROGRESS
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SiHFBC30L Datasheet

Power MOSFET

No Preview Available !

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)a
RthJA
-
Maximum Junction-to-Case (Drain)
RthJC
-
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
For recommended footprint and soldering techniques refer to application note #AN-994.
MAX.
40
1.7
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
www.DataSheetP4AUR.cAoMmETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mAc
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.2 Ab
VDS = 50 V, ID = 2.2 Ac
600 -
-V
- 0.62 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 100
µA
- - 500
- - 2.2 Ω
2.5 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Drain-Source Body Diode Characteristics
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5c
VGS = 10 V
ID = 3.6 A, VDS = 360 V,
see fig. 6 and 13b, c
VDD = 300 V, ID = 3.6 A,
RG = 12 Ω, RD = 82 Ω, see fig. 10b, c
Between lead, and center of die contcat
-
-
-
-
-
-
-
-
-
-
-
660 -
86 - pF
19 -
- 31
- 4.6 nC
- 17
11 -
13 -
ns
35 -
14 -
7.5 - nH
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - 3.6
A
- - 14
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb
- - 1.6 V
trr
TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/µsb, c
-
370 810 ns
Qrr - 2.0 4.2 µC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
c. Uses IRFBC30/SiHFBC30 data and test conditions.
www.vishay.com
2
Document Number: 91111
S-Pending-Rev. A, 10-Jun-08


Part Number SiHFBC30L
Description Power MOSFET
Maker Vishay Siliconix
Total Page 8 Pages
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