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Vishay Intertechnology Electronic Components Datasheet

SiHFD310 Datasheet

Power MOSFET

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Power MOSFET
IRFD310, SiHFD310
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
400
VGS = 10 V
17
3.4
8.5
Single
www.DataSheet4U.com
D
3.6
HEXDIP
S
G
D
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertiable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serveres as a
thermal link to the mounting surface for power dissipation
levels up to 1 W.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
HEXDIP
IRFD310PbF
SiHFD310-E3
IRFD310
SiHFD310
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 41 mH, RG = 25 Ω, IAS = 1.4 A (see fig. 12).
c. ISD 2.0 A, dI/dt 40 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
400
± 20
0.35
0.22
2.8
0.0083
46
0.35
0.10
1.0
4.0
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Document Number: 91133
S-Pending-Rev. A, 23-Jun-08
WORK-IN-PROGRESS
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SiHFD310 Datasheet

Power MOSFET

No Preview Available !

IRFD310, SiHFD310
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
RthJA
TYP.
-
MAX.
62
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
www.DataSheetV4DUS.cToemmperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 400 V, VGS = 0 V
VDS = 320 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 0.38 Ab
VDS = 50 V, ID = 1.2 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 2.0 A, VDS = 320 V,
see fig. 6 and 13b
VDD = 200 V, ID = 2.0 A,
RG = 24 Ω, RD = 95 Ω, see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
MIN.
400
-
2.0
-
-
-
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
- -V
0.47 - V/°C
- 4.0 V
- ± 100 nA
- 25
µA
- 250
- 1.1 Ω
- -S
170 -
34 - pF
6.3 -
- 17
- 3.4 nC
- 8.5
8.0 -
9.9 -
ns
21 -
11 -
4.0 -
nH
6.0 -
- 0.35
A
- 2.8
Body Diode Voltage
VSD
TJ = 25 °C, IS = 0.35 A, VGS = 0 Vb
- - 1.6 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
- 240 540 ns
TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/µsb
Qrr
-
0.85 1.6
µC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91133
S-Pending-Rev. A, 23-Jun-08


Part Number SiHFD310
Description Power MOSFET
Maker Vishay Siliconix
Total Page 8 Pages
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