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SiHFD310 Datasheet Power MOSFET

Manufacturer: Vishay

General Description

G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.1" pin centers.

The dual drain serveres as a thermal link to the mounting surface for power dissipation levels up to 1 W.

Overview

IRFD310, SiHFD310 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 17 3.4 8.

Key Features

  • 400 3.6.
  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • For Automatic Insertion.
  • End Stackable.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Lead (Pb)-free Available Available RoHS.