SiHFI820G Datasheet - Vishay Siliconix

Power MOSFET

SiHFI820G Features

* 500 3.0

* Isolated Package

* High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz)

* Sink to Lead Creepage Distance = 4.8 mm

* Dynamic dV/dt Rating

* Low Thermal Resistance

* Lead (Pb)-free Available Available RoHS

* COMPLIANT www.DataSheet4U

SiHFI820G General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moldin.

SiHFI820G Datasheet (1.51 MB)

SiHFI820G Datasheet Preview — Preview of SiHFI820G PDF

Datasheet Details

Part number:

SiHFI820G

Manufacturer:

Vishay ↗ Siliconix

File Size:

1.51 MB

Description:

Power mosfet.
IRFI820G, SiHFI820G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 24 3..

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SiHFI820G Features

SiHFI820G General Description

Datasheet Details

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Description:

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