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SiHFI9540G Datasheet, Vishay Siliconix

SiHFI9540G mosfet equivalent, power mosfet.

SiHFI9540G Avg. rating / M : 1.0 rating-11

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SiHFI9540G Datasheet

Features and benefits


* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to Lead Creepage Dist. = 4.8 mm
* P-Channel
* 175 °C Operating Te.

Application

The molding compound used provides a high isolation capability and a low thermal resistance between the tab and externa.

Description

G G D S D P-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for .

Image gallery

SiHFI9540G Page 1 SiHFI9540G Page 2 SiHFI9540G Page 3

TAGS

SiHFI9540G
Power
MOSFET
Vishay Siliconix

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