SiHFI9530G Datasheet | Vishay

FEATURES - Isolated Package - High Voltage Isolation = 2.5 k VRMS (t = 60 s; f = 60 Hz) - Sink to Lead Creepage Distance = 4.8 mm - P-Channel - 175 °C Operating Temperature - Dynamic d V/dt Rating - Low Thermal Resistance - Lead (Pb)-free Available Available Ro HS- PLIANT TO-220 FULLPAK DESCRIPTION D P-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The moulding pound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-220 FULLPAK IRFI9530GPb F Si HFI9530G-E3 IRFI9530G Si HFI9530G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Mounting Torque VGS at - 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD d V/dt TJ, Tstg LIMIT - 100 ± 20 - 7.7 - 5.4 - 31 0.28 380 - 7.7 4.2 42 - 5.5 - 55 to + 175 300d 10 1.1 UNIT V A W/°C m J A m J W V/ns °C lbf - in N- m TC = 25 °C for 10 s 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 9.6 μH, RG = 25 Ω, IAS = - 7.7 A (see fig. 12). c. ISD ≤ - 7.7 A, d I/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from...