SiHFI9540G - Power MOSFET

Product Overview

Vishay Siliconix

Datasheet Details

Part number	SiHFI9540G
Manufacturer	Vishay Siliconix
File Size	727.36 KB
Description	Power MOSFET
Datasheet	SiHFI9540G Datasheet
Additional preview pages of the SiHFI9540G datasheet.

Product details

Description

G G D S D P-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.This isolation is equivalent to using a 100 micro

Features

Isolated Package.
High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
Sink to Lead Creepage Dist. = 4.8 mm.
P-Channel.
175 °C Operating Temperature.
Dynamic dV/dt.
Low Thermal Resistance.
Lead (Pb)-free Available Available 0.20 RoHS.

📁 Similar Datasheet

SIHFI530G - Power MOSFET (Vishay)
SiHFIB5N65A - Power MOSFET (Vishay)
SiHFIB6N60A - Power MOSFET (Vishay)
SiHFIBC40GLC - Power MOSFET (Vishay)
SiHFIBC40GLC - N-Channel 650V Power MOSFET (VBsemi)
SiHF065N60E - Power MOSFET (Vishay)
SiHF074N65E - Power MOSFET (Vishay)
SIHF12N60E - Power MOSFET (Vishay)

Other Datasheets by Vishay Siliconix

SiHFI9520G - Power MOSFET
SiHFI9530G - Power MOSFET
SiHFI9610G - Power MOSFET
SiHFI9620G - Power MOSFET
SiHFI9630G - Power MOSFET
SiHFI9634G - Power MOSFET

Published: Dec 8, 2008 |