SiHFI9540G Datasheet | Vishay

FEATURES - Isolated Package - High Voltage Isolation = 2.5 k VRMS (t = 60 s; f = 60 Hz) - Sink to Lead Creepage Dist. = 4.8 mm - P-Channel - 175 °C Operating Temperature - Dynamic d V/dt - Low Thermal Resistance - Lead (Pb)-free Available Available Ro HS- PLIANT TO-220 FULLPAK DESCRIPTION D P-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-220 FULLPAK IRFI9540GPb F Si HFI9540G-E3 IRFI9540G Si HFI9540G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Mounting Torque Notes a. b. c. d. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). VDD = - 25 V, starting TJ = 25 °C, L = 7.4 m H, RG = 25 Ω, IAS = - 11 A (see fig. 12). ISD ≤ - 19 A, d I/dt ≤ 170 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. 1.6 mm from case. VGS at - 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD d V/dt TJ, Tstg LIMIT - 100 ± 20 - 11 - 7.6 - 44 0.32 600 - 11 4.8 48 - 5.5 - 55 to + 175 300d 10 1.1 UNIT V A W/°C m J A m J W V/ns °C lbf - in N- m TC = 25 °C for 10 s 6-32 or M3 screw - Pb...