SiHFIBC30G mosfet equivalent, power mosfet.
* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz)
* Sink to Lead Creepage Distance = 4.8 mm
* Dynamic dV/dt Rating
* Low T.
The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and extern.
Image gallery
Download