SiHFIBE30G Datasheet - Vishay Siliconix

Power MOSFET

SiHFIBE30G Features

* 800 3.0 www.DataSheet4U.com TO-220 FULLPAK

* Isolated Package

* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

* Sink to Lead Creepage Distance = 4.8 mm

* Dynamic dV/dt Rating

* Low Thermal Resistance

* Lead (Pb)-free Available Available

SiHFIBE30G General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The mouldi.

SiHFIBE30G Datasheet (1.18 MB)

SiHFIBE30G Datasheet Preview — Preview of SiHFIBE30G PDF

Datasheet Details

Part number:

SiHFIBE30G

Manufacturer:

Vishay ↗ Siliconix

File Size:

1.18 MB

Description:

Power mosfet.
IRFIBE30G, SiHFIBE30G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 78 .

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SiHFIBE30G Power MOSFET Vishay Siliconix

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SiHFIBE30G Features

SiHFIBE30G General Description

Datasheet Details

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